Description
Features:
- Sapphire ( single crystal of Al 2 O 3 ) is being used extensively as a substrate for III-V nitrides and for many other epitaxial films
- Orientation: C-plane off 0.2+/- 0.1 o to M-plane leftwards from the Primary; 0 +/- 0.1 o off to A-plane
- Diameter: 100mm+/-0.1
- Thickness: 0.65mm +/-0.025
- Major Flat: A-axis[11-20]+/-0.3 o
- Major Flat Length: 32.5mm +/- 2.5mm
- Surface Finish: two sides Epi- polished Ra<=0.3nm(by AFM)
- TTV: <= 15um
- Warp: <= 20um
- Bow: <= 20um
- Package: Each wafer is packed in 1000 class clean room
Typical Properties:
- Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
- Melting Point: 2040 degree C
- Density: 3.97 gram/cm 2
- Growth Technique: CZ
- Crystal Purity: >99.99%
- Hardness: 9 ( mohs)
- Thermal Expansion : 7.5x10 -6 ( / o C)
- Thermal Conductivity : 46.06 @ 0 o C, 25.12 @ 100 o C, 12.56 @ 400 o C ( W/(m.K) )
- Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
- Loss Tangent at 10 GHz: < 2x10 -5 at A axis , <5 x10 -5 at C axis