Description
Features:
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R plane -- (1-102) orientation sapphire wafer is being used as a superconductor substrate due to less mis-matched lattice and stable chemical and physical properties.
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Wafer size: 3" dia x 0.5 mm thickness
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(1-102) R-plane orientation +/-0.5 Deg, orientation with 45 degree counter-clockwise from the projection of C-axis onto the R-plane
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Polished surface: Wafer surface is EPI polished via a special CMP procedure.
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One side polished
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Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container.
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Precaution: R plane sapphire wafer is easy to cleave compared with C plane's. Please handle it with a care
Typical Properties:
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Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms,
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Melting Point: 2040 degree C
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Density: 3.97 gram/cm2
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Growth Technique: CZ
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crystal purity: >99.99%
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Hardness: 9 ( mohs)
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Thermal Expansion: 7.5x10-6 (/ oC)
- Thermal Conductivity: 46.06 @ 0 oC 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )
- Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
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Loss Tangent at 10 GHz: < 2x10-5 at A axis , <5 x10-5 at C axis
Please click here for detail data
Please click picture below to choose orientation and size of sapphire substrate
| A-plane (11-20) | C-Plane (0001) | M-Plane (1-100) | R-Plane (1-102) | Al2O3 (10-14) |
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