Description
Features:
- Sapphire (single crystal of Al 2 O 3 ) is being used extensively as a substrate for III-V nitrides and for many other epitaxial films
- Orientation: C-axis[0001] ( +/-0.3 Deg) with Standard Flat
- Diameter: 3" +/- 0.3mm
- Thickness: 430um +/- 25 um
- Major Flat: A-axis[11-20]+/-0.5 o
- Surface Finish: Front sides: Epi- polished Ra<0.5nm (by AFM)
- Back side: Epi- polished , <0.5nm(by AFM)
- TTV: < =15um
- BOW: <=15um
- WARP: <=15um
- Polished surface: Two side epi polished by special CMP technology
- Package: Each wafer is packed in 1000 class clean room
Typical Properties:
- Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
- Melting Point: 2040 degree C
- Density: 3.97 gram/cm 2
- Growth Technique: CZ
- Crystal Purity: >99.99%
- Hardness: 9 ( mohs)
- Thermal Expansion : 7.5x10 -6 ( / o C)
- Thermal Conductivity : 46.06 @ 0 o C, 25.12 @ 100 o C, 12.56 @ 400 o C ( W/(m.K) )
- Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
- Loss Tangent at 10 GHz: < 2x10 -5 at A axis , <5 x10 -5 at C axis