Description
Features:
- Sapphire ( single crystal of Al2O3 ) is being used extensively as a substrate for III-V nitrides and for many other epitaxial films
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Wafer size: 1" dia x 0.5 mm thickness
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(0001) C plane orientation ( +-0.5o) with Standard Flat
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Polished surface: two sides epi polished by special CMP technology
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Surface roughness: Ra < 5 A ( by AFM)
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Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container
Typical Properties:
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Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
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Melting Point: 2040 degree C
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Density: 3.97 gram/cm2
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Growth Technique: CZ
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Crystal Purity: >99.99%
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Hardness: 9 ( mohs)
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Thermal Expansion: 7.5x10-6 (/ oC)
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Thermal Conductivity: 46.06 @ 0 oC, 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )
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Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
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Loss Tangent at 10 GHz: < 2x10-5 at A axis, <5 x10-5 at C axis