Description
Features:
- Sapphire substrate is the popular substrates for III-V nitrides, superconductor and magnetic epi film due to less mis-matched lattice and stable chemical and physical properties
- Wafer size: 10 mm x 10 mm x 1.0mm thick
- Orientation tolerance: +/-0.5 o . A plane orientation
- Polished surface: substrate surface is EPI polished via a special CMP procedure with RA < 5 A
- 2 sides polished
- Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container.
- Precaution: R plane sapphire wafer is easy to cleave compared with C plane's. Please handle it with a care
Typical Properties:
- Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
- Melting Point: 2040 degree C
- Density: 3.97 gram/cm 2 Growth Technique: CZ
- Crystal Purity: >99.99%
- Hardness: 9 (mohs)
- Thermal Expansion : 7.5x10 -6 ( / o C)
- Thermal Conductivity : 46.06 @ 0 o C, 25.12 @ 100 o C, 12.56 @ 400 o C ( W/(m.K) )
- Dielectric Constant: ~ 9.4 @ 300K at A axis, ~ 11.58 @ 300K at C axis
- Loss Tangent at 10 GHz: < 2x10 -5 at A axis , < 5 x10 -5 at C axis