1000 nm Silicon Nitride Film (LPCVD) on Si(100), P-type, B-doped 100 mm dia .x0.525mm thick, 1sp,R:1-20 ohm.cm

Silicon Nitride Film

• Si3N4 Film coated by low stress LPCVD method
•  Si3N4 Thickness:1000 nm +/- 10%
•  Si3N4 covers both sides of Silicon wafer
• Refractive Index of Si3N4: 1.95 - 2.05

Silicon Wafer Specifications:

• Conductive type:        Si   P- type, B-doped
  
• Resistivity:                 1-20 ohm-cm
• Size:                          4" diameter +/- 0.5 mm x  0.525 +/- 0.025 mm th
• Orientation:                (100) +/- 0.5^o
• Polish:                        One  side  polished
• Surface roughness:     Prime
• Packing:                      Vacuum packed on a 4" single wafer carrier box
• Optional:  you may need the tool below to handle the wafer ( click picture to order )

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