VGF-Ge Wafer(100) . 50 mmdia x 0.175 mm, 1SP, P type ( Ga doped) R:0.008-0.021 Ohm.cm

Specification

• Growing Method: VGF
• Orientation: (100) +/-0.5 Deg.
• Wafer Size: 50(+/_0.3) mm  dia x  175(+/_15) microns  
• Surface Polishing: One side  polished
• Surface roughness: RMS or Ra:~ 10 A(By AFM)
• Doping: Ga Doped
• Conductor type: P-type
• Resistivity: 0.008-0.021 Ohm.cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.)
• Carrier Concentration: (0.4-2.1)x10^18/cm^3.
• Mobility: 386-693  cm^2/V.S
• EPD: <=500 /cm^2
• Ra(Average Roughness) : < 0.4 nm
• Package: under 1000 class clean room     

Typical Properties:

• Structure: Cubic, a = 5.6754 A
• Density: 5.323 g/cm3 at room temperature
• Melting Point: 937.4 ^oC
• Thermal Conductivity: 640

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