VGF-Ge Wafer(100), 100mm dia x 0.4 mm, 2SP, P type (Ga doped), R:0.0038-0.0158 Ohm.cm

Specification

• Growing Method: VGF
• Orientation: (100) +/-0.4 Deg.
• Wafer Size: 100mm  dia x  400 microns  
• Surface Polishing: Two sides   polished
• Surface roughness: < 8 A ( by AFM)
• Doping: Ga Doped
• Conductor type: P-type
  
• Carrier Concentration: (0.64-6.67) x10^18 /c.c
  
• EPD: <500 /cm
  
• Resistivity: 0.0038-0.0158 ohm.cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.)
• Ra(Average Roughness) : < 0.4 nm 
• Package: under 1000 class clean room     

Typical Properties:

• Structure: Cubic, a = 5.6754 A
• Density: 5.323 g/cm3 at room temperature
• Melting Point: 937.4 ^oC
• Thermal Conductivity: 640

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