VGF-GaAs (100) orientation, Si-doped 5 x 5 x 0.5mm, 1sp

VGF-GaAs (100) orientation, Si-doped 5 x 5 x 0.5mm, 1sp

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VGF-GaAs (100) orientation, Si-doped 5 x 5 x 0.5mm, 1sp
  • VGF-GaAs (100) orientation, Si-doped 5 x 5 x 0.5mm, 1sp
VGF-GaAs (100) orientation, Si-doped 5 x 5 x 0.5mm, 1sp

VGF-GaAs (100) orientation, Si-doped 5 x 5 x 0.5mm, 1sp

SKU: vgf-gaas-100-orientation-si-doped-5-x-5-x-0-5mm-1sp

Price: RFQ

Description

 GaAs single crystal wafer Growing Method: VGF Orientation:                      (100) Size:                              5x5x0.5mm Polishing:                         one side polished Doping:                            Si doped Conductor type: S-C-N Carrier Concentration:        (7.2-11.7) x 10^17 /cm^3 Mobility:                           2170-2650 cm^2/V.S EPD:                               <5000/cm^2 resistivity:                         (2.56-3.55)x10^-3 ohm.cm Ra(Average Roughness) :  < 0.4 nm Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

Other GaAs


 		InSb

 		Other InAs

 		 InP 


 		GaSb

 		Wafer Box

 Film Coater

 RTP Furnaces