VGF-GaAs (100) N-type Si doped 2" dia x 0.5 mm, 1sp,cc:(0.63-1.17) x 10^18/cm^3

VGF-GaAs (100) N-type Si doped 2" dia x 0.5 mm, 1sp,cc:(0.63-1.17) x 10^18/cm^3

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VGF-GaAs (100) N-type Si doped 2" dia x 0.5 mm, 1sp,cc:(0.63-1.17) x 10^18/cm^3
  • VGF-GaAs (100) N-type Si doped 2" dia x 0.5 mm, 1sp,cc:(0.63-1.17) x 10^18/cm^3
VGF-GaAs (100) N-type Si doped 2" dia x 0.5 mm, 1sp,cc:(0.63-1.17) x 10^18/cm^3

VGF-GaAs (100) N-type Si doped 2" dia x 0.5 mm, 1sp,cc:(0.63-1.17) x 10^18/cm^3

SKU: vgf-gaas-100-n-type-si-doped-2-dia-x-0-5-mm-1sp-cc-0-63-1-17-x-10-18-cm-3

Price: RFQ

Description

 GaAs single crystal wafer Growing Method: VGF Orientation:                           (100) Size:                                     2" dia x 0.5mm Polishing:                             One  side polished Doping:                                Si doped Conductor type:                   N-type Carrier Concentration:        (0.63 - 1.33) x 10^18 /cm^3 Mobility:                               (2170 - 2920) cm^2/V.S Resistivity:                           (2.12 - 3.55) E-3  ohm.cm EPD:                                    < 5000cm^2 Ra(Average Roughness):    < 0.4 nm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

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