Description
|
Typical Properties |
Crystal Structure |
Tetragonal a=4.5936 Å, c= 2.9582 Å, |
Growth Method |
Floating Zone |
Melting Point |
1840 oC |
Density |
4.26 g/cm3 |
Hardness |
Mohs 7 |
Specific Heat capacity |
0.17 ( 25 oC) |
Linear expansion Coefficient |
a: 7.14x10-6 c: 9.19x10-6 |
Refractive Index |
n0 = 2.47 ne = 2.73 at l = 1.3 mm |
Transmittance |
0.5- 4.5 mm |
Thermal optical Coefficient |
dh/dT: a: -0.72 x10-6/K c: -0.42x10-6/K |
|
~25 mm dia x 35 mm length ( conical ) |
| Substrate A-Z | Dicing saws | Plasma Cleaners | Wafer Carriers | Film Coater |