Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, N type, As-doped 1SP, R:0.001-0.005 ohm.cm - Fm300SOonSIAsa100D0525C1US

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, N type, As-doped 1SP, R:0.001-0.005 ohm.cm - Fm300SOonSIAsa100D0525C1US

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Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, N type, As-doped 1SP, R:0.001-0.005 ohm.cm - Fm300SOonSIAsa100D0525C1US
  • Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, N type, As-doped 1SP, R:0.001-0.005 ohm.cm - Fm300SOonSIAsa100D0525C1US
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, N type, As-doped 1SP, R:0.001-0.005 ohm.cm - Fm300SOonSIAsa100D0525C1US

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, N type, As-doped 1SP, R:0.001-0.005 ohm.cm - Fm300SOonSIAsa100D0525C1US

SKU: thermal-oxide-wafer-300-nm-sio2-layer-on-si-100-4dia-x-0-525-mm-t-n-type-as-doped-1sp-r-0-001-0-005-ohm-cm-fm300soonsiasa100d0525c1us

Price: RFQ

Description

Thermal oxide Layer

  • Research Grade , about 80 % useful  area
  • SiO2 layer on 4'' Silicon wafer
  • Oxide layer thickness: 300 nm   ( 3000A)  +/-10%
  • Refractive index - 1.455

Silicon Wafer Specifications:

  • Conductive type:          N-type/ As-doped 
  • Resistivity:                0.001-  0.005 ohm.cm  (If you would like to measure the resistivity accurately, 
                                      please order our Portable 4 Probe Resistivity Testing Instrument.) 
  • Size:                         4" diameter +/- 0.5 mm x 0.525 mm
  • Orientation:                (100) +/- 1o
  • Polish:                        one side polished
  • Surface roughness, Ra: < 5A (RMS)



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