Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, N type, P-doped , 1SP R:1-10 ohm.cm

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, N type, P-doped , 1SP R:1-10 ohm.cm

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Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, N type, P-doped , 1SP R:1-10 ohm.cm
  • Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, N type, P-doped , 1SP R:1-10 ohm.cm
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, N type, P-doped , 1SP R:1-10 ohm.cm

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, N type, P-doped , 1SP R:1-10 ohm.cm

SKU: thermal-oxide-wafer-300-nm-sio2-layer-on-si-100-4dia-x-0-50-mm-t-n-type-p-doped-1sp-r-1-10-ohm-cm

Price: RFQ

Description

 Thermal oxide Layer Research Grade , about 80 % useful  area SiO2 layer on 4" Silicon wafer Oxide layer thickness: 300 nm   (3000A)  +/-10% Growth method - Dry oxidizing at 1000 o C Refractive index - 1.455 Silicon Wafer

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