Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, P type, 1SP R:1-10 ohm.cm

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, P type, 1SP R:1-10 ohm.cm

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Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, P type, 1SP R:1-10 ohm.cm
  • Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, P type, 1SP R:1-10 ohm.cm
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, P type, 1SP R:1-10 ohm.cm

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, P type, 1SP R:1-10 ohm.cm

SKU: thermal-oxide-wafer-300-nm-sio2-layer-on-si-100-4dia-x-0-5-mm-t-p-type-1sp-r-1-10-ohm-cm

Price: RFQ

Description

 Thermal oxide Research Grade , about 80 % useful  area SiO2 layer on 4" Silicon wafer Oxide layer thickness: 300 nm   ( 3000A)  +/- 10 % Refractive index - 1.455 Silicon Wafer

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