Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, N type, As-doped 1SP, R:0.001-0.005 ohm.cm

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, N type, As-doped 1SP, R:0.001-0.005 ohm.cm

RM0.00 MYR
RM0.00 MYR
Skip to product information
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, N type, As-doped 1SP, R:0.001-0.005 ohm.cm
  • Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, N type, As-doped 1SP, R:0.001-0.005 ohm.cm
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, N type, As-doped 1SP, R:0.001-0.005 ohm.cm

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, N type, As-doped 1SP, R:0.001-0.005 ohm.cm

SKU: thermal-oxide-wafer-300-nm-sio2-layer-on-si-100-4dia-x-0-5-mm-t-n-type-as-doped-1sp-r-0-001-0-005-ohm-cm

Price: RFQ

Description

 Thermal oxide Layer Research Grade , about 80 % useful  area SiO2 layer on 4'' Silicon wafer Oxide layer thickness: 300 nm   ( 3000A)  +/-10% Refractive index - 1.455 Silicon Wafer

Thin Films  A-Z

Crystal wafer A-Z

Plasma Cleaner

Wafer Containers

Dicing saw

Film Coater