Thermal Oxide Wafer: 100 nm SiO2 on Si (100), 5x5 x 0.5 mm, N type, As-doped, 1SP, R: 0.001-0.005 ohm.cm

Thermal Oxide Wafer: 100 nm SiO2 on Si (100), 5x5 x 0.5 mm, N type, As-doped, 1SP, R: 0.001-0.005 ohm.cm

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Thermal Oxide Wafer: 100 nm SiO2 on Si (100), 5x5 x 0.5 mm, N type, As-doped, 1SP, R: 0.001-0.005 ohm.cm
  • Thermal Oxide Wafer: 100 nm SiO2 on Si (100), 5x5 x 0.5 mm, N type, As-doped, 1SP, R: 0.001-0.005 ohm.cm
Thermal Oxide Wafer: 100 nm SiO2 on Si (100), 5x5 x 0.5 mm, N type, As-doped, 1SP, R: 0.001-0.005 ohm.cm

Thermal Oxide Wafer: 100 nm SiO2 on Si (100), 5x5 x 0.5 mm, N type, As-doped, 1SP, R: 0.001-0.005 ohm.cm

SKU: thermal-oxide-wafer-100-nm-sio2-on-si-100-5x5-x-0-5-mm-n-type-as-doped-1sp-r-0-001-0-005-ohm-cm

Price: RFQ

Description

Thermal oxide Layer

  • SiO2 layer on Silicon wafer
  • Oxide layer thickness: 100 nm   ( 1000A)  +/-10%
  • Refractive index - 1.455 Silicon Wafer

 

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