SOI Wafer: 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron doped )

Device Layer

Diameter:

6" 

Type/Dopant:

N type/P-doped

Orientation:

<1-0-0>+/-.5 degree

Thickness:

2.5±0.5µm

Resistivity:

1-4 ohm-cm

Finish:

Front Side Polished

Buried Thermal Oxide:

Thickness:

1.0um +/- 0.1 um

Handle Wafers:

Type/Dopant

P Type, B doped

Orientation

<1-0-0>+/-.5 degree

Resistivity:

10-20 ohm-cm

Thickness:

625 +/- 15 um

Finish:

As-received (not polished)