Description
Specifications
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Device Layer |
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Size: |
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10x10 |
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Type/Dopant: |
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N type/P-doped |
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Orientation: |
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<1-0-0>+/-0.5 degree |
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Thickness: |
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2.5±0.5µm |
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Resistivity: |
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1-4 ohm-cm |
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Finish: |
Front Side Polished |
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Buried Thermal Oxide: |
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Thickness: |
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1.0 um +/- 0.1 um |
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Handle Wafers: |
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Type/Dopant |
P type/B-doped |
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Orientation |
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<1-0-0>+/-0.5 degree |
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Resistivity: |
10-20 ohm.cm |
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Thickness: |
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625 +/- 15 um |
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Finish: |
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As received (not polished) |
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