Description
Silicon on sapphire (SOS) is a hetero-epitaxial process for integrated circuit manufacturing that consists of a thin layer (typically thinner than 0.6 micrometres) of silicon grown on a sapphire (Al 2 O 3 ) wafer. SOS is part of the Silicon on Insulator (SOI) family of CMOS technologies. SOS is primarily used in aerospace and military applications because of its inherent resistance to radiation .
Materials: Silicon on Sapphire
Silicon EPI Layer:
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Silicon Orientation: (100)
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Type, Dopant: Intrinsic type, undoped
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Silicon Thickness:1.0 um +/- 10%
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Resistivity: > 100 ohm.cm
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Micro-particle density ( for particles > 2 um) < 2/cm^2
Sapphire Wafer:
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R plane -- (1-102) with single flat
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Wafer size: 5x5 x 0.46 mm thickness
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Front surface: Epi-polished (Ra < 4 nm)
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Back surface: Optical grade polish
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TTV < 15 um, Bow < 20 um, Warp < 20 um, Flatness (TIR) < 12 um
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