Description
Specifications:
- Film: SiC Epi film with 3C structure grown by PECVD
- Thickness:1.0um +/- 10%
- Orientation: 3C SiC (111)
- Surface: CMP - film chemical mechanical polished with Ra < 10 Angstrom
- Type and dopant: N type, Undoped
- Surface defects density (microscopic inspection of crystallites or other macro-defects) <= 3E3cm^2
- TTV 5-29
- Bow -9 ~ 3
- Silicon substrate:
- Size: 10x10 x 1.0 mm thickness
- Orientation: (111)
- Type:N type / P doped
- Resistivity:1- 10 ohm.cm
- Polish: Both sides optical polished
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