Si Wafer (111) 2" dia x 0.28 mm, 1SP, P type, B doped, R:0.1-10 ohm-cm - SIBc50D028C1R01

Si Wafer (111) 2" dia x 0.28 mm, 1SP, P type, B doped, R:0.1-10 ohm-cm - SIBc50D028C1R01

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Si Wafer (111) 2" dia x 0.28 mm, 1SP, P type, B doped, R:0.1-10 ohm-cm - SIBc50D028C1R01
  • Si Wafer (111) 2" dia x 0.28 mm, 1SP, P type, B doped, R:0.1-10 ohm-cm - SIBc50D028C1R01
Si Wafer (111) 2" dia x 0.28 mm, 1SP, P type, B doped, R:0.1-10 ohm-cm - SIBc50D028C1R01

Si Wafer (111) 2" dia x 0.28 mm, 1SP, P type, B doped, R:0.1-10 ohm-cm - SIBc50D028C1R01

SKU: sibc50d028c1r01

Price: RFQ

Description

 Single crystal Silicon Conductive type: P type/ Boron doped Resistivity: 0.1 - 10 ohm-cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument Size: 50.8 diameter +/- 0.5 mm x 0.28 +/- 0.025 mm Orientation: (111) +/- 1 o Polish: one side polished Surface roughness: < 5A