Si Wafer (111) 4 +/- 0.5 degree off , 4 " dia x 0.5 mm, 1SP, P Type, B doped, resistivity: 0.004-0.006 ohm-cm

Si Wafer (111) 4 +/- 0.5 degree off , 4 " dia x 0.5 mm, 1SP, P Type, B doped, resistivity: 0.004-0.006 ohm-cm

RM0.00 MYR
RM0.00 MYR
Skip to product information
Si Wafer (111) 4 +/- 0.5 degree off , 4 " dia x 0.5 mm, 1SP, P Type, B doped, resistivity: 0.004-0.006 ohm-cm
  • Si Wafer (111) 4 +/- 0.5 degree off , 4 " dia x 0.5 mm, 1SP, P Type, B doped, resistivity: 0.004-0.006 ohm-cm
Si Wafer (111) 4 +/- 0.5 degree off , 4 " dia x 0.5 mm, 1SP, P Type, B doped, resistivity: 0.004-0.006 ohm-cm

Si Wafer (111) 4 +/- 0.5 degree off , 4 " dia x 0.5 mm, 1SP, P Type, B doped, resistivity: 0.004-0.006 ohm-cm

SKU: si-wafer-111-4-0-5-degree-off-4-dia-x-0-5-mm-1sp-p-type-b-doped-resistivity-0-004-0-006-ohm-cm

Price: RFQ

Description

 Single crystal               Si,    (CZ) Conductivity:               P type ( B - doped) Resistivity:                  0.004-0.006 ohm-cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument .) Size:                            4" in diameter x 0.5mm Orientation:                 (111)  4 +/- 0.5 degree off Polish:                         One side polished Surface roughness:       < 5A Optional:  you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A-Z Plasma Cleaner Wafer Containers Dicing saw Film Coater

Other Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater