Si Wafer (111) 2" dia x 0.1 mm, 1SP, P type, B doped, R:1-10 ohm.cm - SIBc50D01C1R1US

Si Wafer (111) 2" dia x 0.1 mm, 1SP, P type, B doped, R:1-10 ohm.cm - SIBc50D01C1R1US

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Si Wafer (111) 2" dia x 0.1 mm, 1SP, P type, B doped, R:1-10 ohm.cm - SIBc50D01C1R1US
  • Si Wafer (111) 2" dia x 0.1 mm, 1SP, P type, B doped, R:1-10 ohm.cm - SIBc50D01C1R1US
Si Wafer (111) 2" dia x 0.1 mm, 1SP, P type, B doped, R:1-10 ohm.cm - SIBc50D01C1R1US

Si Wafer (111) 2" dia x 0.1 mm, 1SP, P type, B doped, R:1-10 ohm.cm - SIBc50D01C1R1US

SKU: si-wafer-111-2-dia-x-0-1-mm-1sp-p-type-b-doped-r-1-10-ohm-cm-sibc50d01c1r1us

Price: RFQ

Description

 Single crystal             Silicon Conductive type:      P type/ Boron doped Resistivity:                1-10 ohm.cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument .) Size:                         50.8 diameter +/- 0.5 mm x 0.1 +/- 0.025 mm Orientation:               (111) +/- 1 o Polish:                      One  side  polished Surface roughness:    < 5A Optional:  you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A-Z Plasma Cleaner Wafer Containers Dicing saw Film Coater

Other Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater