Quartz single crystal, X-cut, 1"x1"x0.5mm, 2SP --SOX252505S2

Quartz single crystal, X-cut, 1"x1"x0.5mm, 2SP --SOX252505S2

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Quartz single crystal, X-cut, 1"x1"x0.5mm, 2SP --SOX252505S2

Quartz single crystal, X-cut, 1"x1"x0.5mm, 2SP --SOX252505S2

SKU: quartz-single-crystal-x-cut-1x1x0-5mm-2sp-sox252505s2

Price: RFQ

Description

Single crystal SiO2 (quartz) Size: 1"x1" x 0.5mm Orientation: X-cut Polish: two sides polished Surface roughness:  < 5 A (by AFM) Packing: in 1000 class clean room by wafer carrier Single crystal quartz wafer is an excellent substrate for microwave filters for wireless communication industries.  MTI can provide high quality quartz wafers for both research and industries production at the lowest price. Typical Physical Properties Purity   Wt % Saw grade:  > 99.9     Optical grade: 99.99 Crystal Structure Hex.     a= 4.914 Å   c = 5.405 Å Growth Method Hydrothermal Hardness 7.0   Moh’s Density 2.684   g/cm 3 Melt Point 1610 o C          ( phase transition point: 573.1 o C) Specific Heat 0.18  cal/gm Thermoelectric Constant 1200 mV/ o C @ 300 o C Thermal Conductivity 0.0033  cal/cm/ o C Thermal Expansion (x10 -6 / o C) a 11 : 13.71      a 33 :  7.48 Index of Refraction 1.544 Q Value Acoustic Velocity, SAW Frequency Constant, BAW Piezoelectric Coupling 1.8 x 10 6 min. 3160  ( m/sec  ) 1661  ( kHz/mm ) K 2 (%)   BAW:  0.65       SAW: 0.14 Inclusion IEC Grade II choose other  quartz substrate Choose substrate from A -Z Wafer Carrier Box Film Coating

 

Typical Physical Properties

Purity   Wt %

Saw grade:  > 99.9     Optical grade: 99.99

Crystal Structure

Hex.     a= 4.914 Å   c = 5.405 Å

Growth Method

Hydrothermal

Hardness

7.0   Moh’s

Density

2.684   g/cm3

Melt Point

1610 oC          ( phase transition point: 573.1oC)

Specific Heat

0.18  cal/gm

Thermoelectric Constant

1200 mV/oC @ 300 oC

Thermal Conductivity

0.0033  cal/cm/ oC

Thermal Expansion (x10-6/ oC)

a11: 13.71      a33:  7.48

Index of Refraction

1.544

Q Value

Acoustic Velocity, SAW

Frequency Constant, BAW

Piezoelectric Coupling 

1.8 x 106 min.

3160  ( m/sec  )

1661  ( kHz/mm )

K2 (%)   BAW:  0.65       SAW: 0.14       

Inclusion

IEC Grade II

,


choose other  quartz substrate

Choose substrate from A -Z


Wafer Carrier Box

Film Coating