Lattice matched N-type InGaAs:undoped, on S-doped InP(100) 3"x0.65mm, 1sp - FmInGAonIPa76D065C1US5

Lattice matched N-type InGaAs:undoped, on S-doped InP(100) 3"x0.65mm, 1sp - FmInGAonIPa76D065C1US5

RM0.00 MYR
RM0.00 MYR
Skip to product information
Lattice matched N-type InGaAs:undoped, on S-doped InP(100) 3"x0.65mm, 1sp - FmInGAonIPa76D065C1US5
  • Lattice matched N-type InGaAs:undoped, on S-doped InP(100) 3"x0.65mm, 1sp - FmInGAonIPa76D065C1US5
Lattice matched N-type InGaAs:undoped, on S-doped InP(100) 3"x0.65mm, 1sp - FmInGAonIPa76D065C1US5

Lattice matched N-type InGaAs:undoped, on S-doped InP(100) 3"x0.65mm, 1sp - FmInGAonIPa76D065C1US5

SKU: lattice-matched-n-type-ingaas-undoped-on-s-doped-inp100-3x0-65mm-1sp-fmingaonipa76d065c1us5

Price: RFQ

Description

 3" dia. InP/InGaAs/InP  layers on InP (100) by MOCVD deposition Substrate: N-type S doped InP [100]±0.5°, Nc=~5E18/cc Wafer Size: 3" diameter Thickness:650 +/- 25um One side polished, backside etched, US Flats EPI Layer 1: 1um thick InP film, n-type Si doped, Nc=~5E15/cc EPI Layer 2: 3.0±0.5µm thick, lattice matched In0.53Ga0.47As film, n-type undoped, Nc=1E15-1E16/cc EPI Layer 3(top): 1um thick InP film, n-type Si doped, Nc=1E15-1E16/cc