InSb (111)A 49mm dia x 0.5 mm, Undoped, N type, one side polished

2" InSb wafer (N type, undoped)

• Size: 49 mm  dia x 0.5mm  thick
• Orientation:<111> +/-0.5^o  with two reference flats
• Polishing: one side  polished ( back side etched )
• Packing: Sealed under nitrogen with single wafer container  in 1000 class clean room

Properties

• Growth method: LEC
• Orientation: (111)A  +/- 0.5^o
• Orientation Flat                                                          
• Doping: Undoped
• Conductivity type: N type
• Carrier Concentration: <1E14 @77K
• Mobility: >2E5 cm^2/V.s   
• EPD: <500 cm^-2

Other GaAs

InSb

Other InAs

InP

GaSb

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