InSb (111)- B 2" dia x 0.45 mm, Te-doped, N type, 1 side(Sb) polished

2" InSb  wafer   (N type, Te-doped)

• Size: 2" dia x 0.45-0.5mm  thick with thickness tolerance +/- 25 um
• Orientation: <111>B +/-0.5^o  
• Polishing: one-side side(Sb) polished ( back side etched )
• Packing: Sealed under nitrogen with single wafer container  in 1000 class clean room

Properties

• Growth method: LEC
• Orientation: <111>B  +/- 0.5^o               
• Doping: Te-doped
• Conductivity type: N type
• Carrier Concentration: (5.0E17 - 2.0E18) cm-3 @77K
• Mobility: 24,000-34,000 cm²/Vs
• EPD: <1.0 E+3  / cm -2

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InSb

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