Description
5x5x0.45 mm InSb wafer (P type, Ge doped)
- Size: 10x10x0.45 mm
- Orientation <100> +/-0.5 o with two reference flats
- Polishing: one-side side polished ( back side etched )
- Packing: Sealed under nitrogen with single wafer container in 1000 class clean room
Properties
- Growth method LEC
- Orientation (100) +/- 0.5 o
- Orientation Flat Doping Ge doped
- Conductivity type P type
- Carrier Concentration (0.05- 0.50)E17@77K
Other GaAs |
InSb
|
Other InAs
|
InP |
GaSb
|
Wafer Box
|
Film Coaters
|
RTP Furnaces
|