Description
2" InSb wafer (N type, Undoped )
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Size: 2" dia x 0.5 (+/- 0.025 ) mm thick
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Orientation: <100> +/-0.5 o
- Type/dopant: N-type/ Undoped
- Surface Polishing : In(A) face polished chemical ,final face
Sb(B) face polished Linde A0.3um (mirror finish)
- Mobility: > 3.9E4 /cm^2/V.S
- EPD: < 200
- Carrier Concentration: (2-7)E14 cm-3@77K
- Growth Method: LEC
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Packing: Sealed in nitrogen in single wafer container at 100 class clean room
Other GaAs |
InSb
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Other InAs
|
InP |
GaSb
|
Wafer Box
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Film Coaters
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RTP Furnaces
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