Description
2" InSb wafer (N type, Te Doped )
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Size: 2" dia x 0.45 (+/- 0.025 ) mm thick
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Orientation: <100> +/-0.5 o
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Polishing: one side polished
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Packing: Sealed in nitrogen in single wafer container at 100 class clean room
Properties
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Growth method: LEC
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Orientation: (100) +/- 0.5 o
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Orientation Flat: Two reference flats at <100>
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Doping: Te
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Conductivity type: N type
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Carrier Concentration (@77 K): (0.19-0.50)E18/cc @77K
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Resistivities (ohm-cm): 0.0005-0.001
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Mobility (cm^2/Vs) (@77K): ( 3.58-5.60 )E +4
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EPD ( / cm^2): < 200
Other GaAs |
InSb
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Other InAs
|
InP |
GaSb
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Wafer Box
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Film Coaters
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RTP Furnaces
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