Description
- InP single crystal wafer
- Orientation: (111)B
- Size: 2" diameter x 0.35mm
- Doping: undoped
- Conducting type: N Type, Semi-Conducting
- Resistivity: (2-5)E-1 ohm.cm
- Carrier Concentration:(4.80-5.87)E15 /c.c.
- Mobility:4030-4570cm^2/v.s
- Polish: one side polished
- Ra(Average Roughness) : < 0.4 nm
- EPD: N/A
- EPI ready surface and packing
Other GaAs |
InSb
|
Other InAs
|
InP |
GaSb
|
Wafer Box
|
Film Coaters
|
RTP Furnaces
|