Description
- InP single crystal wafer
- Orientation: (111)B
- Size: 2" diameter x 0.35mm
- Doping: Fe doped
- Conducting type: Semi-Insulating
- Resistivity:(1.42-1.56)E7 ohm.cm
- Mobility:1790-1980 cm^2/v.s
- Polish: one side polished
- Ra(Average Roughness) : < 0.4 nm
- EPI ready surface and packing
Other GaAs |
InSb
|
Other InAs
|
InP |
GaSb
|
Wafer Box
|
Film Coaters
|
RTP Furnaces
|