Description
- Growth method: LEC
- Orientation: (411) ± 0.5 Deg
- Orientation Flat: N/A
- Doping: S doped
- Conductivity type: N type
- Carrier Concentration: <7E17 ~ 1E18 / cm3
- Mobility: >10000 cm2/V.S
- EPD: <2E4 / cm 2
- Standard thickness: 500 ± 20 mm
- Size: ellipse shape, (area > 30mm diameter)
- Polish: one-side
Other GaAs |
InSb
|
Other InAs
|
InP |
GaSb
|
Wafer Box
|
Film Coaters
|
RTP Furnaces
|