InAs (111)A, P Type, Zn doped 5x5 x 0.45 mm, one side polished - IAZncA0505045S1US5

InAs (111)A, P Type, Zn doped 5x5 x 0.45 mm, one side polished - IAZncA0505045S1US5

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InAs (111)A, P Type, Zn doped 5x5 x 0.45 mm, one side polished - IAZncA0505045S1US5
  • InAs (111)A, P Type, Zn doped 5x5 x 0.45 mm, one side polished - IAZncA0505045S1US5
InAs (111)A, P Type, Zn doped 5x5 x 0.45 mm, one side polished - IAZncA0505045S1US5

InAs (111)A, P Type, Zn doped 5x5 x 0.45 mm, one side polished - IAZncA0505045S1US5

SKU: inas-111a-p-type-zn-doped-5x5-x-0-45-mm-one-side-polished-iaznca0505045s1us5

Price: RFQ

Description

2" InAs wafer (P type)

  • 2" InAs wafer    
  • P Type, Zn doped
  • Size:  5x5x0.45 mm +/-20 microns
  • Orientation: <111>A
  • Polishing:  one-side polishd
  • Resistivities:  5.1x10^-2 ohm-cm
  • Packing:  in 1000 class clean room with wafer container

Properties

  • Growth method: LEC
  • Orientation:  (111) A 
  • Orientation Flat: SEMI                    
  • Doping:  Zn doped
  • Conductivity type: P type
  • Carrier Concentration:  6.4E17/ cm3
  • Mobility: 192 cm2/V.S  
  • Resistivity:  5.1x10^-2  Ohm-Cm
  • EPD: 1.9E4 / cm 2