InAs (111)A, P Type, Zn doped 2" dia x 0.45 mm, one side polished

2" InAs wafer (P type)

• 2" InAs wafer    
• P Type, Zn doped
• Size: 2" dia x 450 micron +/-20 microns
• Orientation: <111>A
•  Polishing: one-side polishd
• Resistivities: 5.1x10^-2 ohm-cm
• Packing: in 1000 class clean room with wafer container

Properties

• Growth method: LEC
• Orientation: (111) A 
• Orientation Flat: SEMI                    
• Doping: Zn doped
• Conductivity type: P type
• Carrier Concentration: 6.4E17/ cm³
• Mobility: 192 cm²/V.S  
• Resistivity: 5.1x10^-2  Ohm-Cm
• EPD: 1.9E4 / cm ²

Other GaAs

InSb

Other InAs

InP

GaSb

Wafer Box

Film Coaters

RTP Furnaces