Description
- Growth method: LEC
- Orientation: (100) ± 0.5 Deg
- Doping: Undoped
- Conductivity type: N type
- Carrier Concentration: <3E16 / cm3
- Mobility: >20000 cm2/V.S
- EPD: <5E4 / cm 2
- Standard thickness: 500 ± 20 mm
- Standard diameter: 30 mm
- Polish: one-side
Other GaAs |
InSb
|
Other InAs
|
InP |
GaSb
|
Wafer Box
|
Film Coaters
|
RTP Furnaces
|