Ge Wafer(100) . 100mm dia x 0.5 mm, 2SP, P type ( Ga doped) R:1.4-1.7 ohm.cm

Specification

• Growing Method: CZ
• Orientation: (100) +/- 0.09 Deg.
• Primary Flat: <110> +/- 0.09 Deg.
• Wafer Size: 100mm(+/-0.05mm)  dia x  500 (+/-25 microns  )
• Surface Polishing: Two sides epi polished
• Surface roughness: < 5 A ( by AFM)
• Doping: Ga Doped
• Conductor type: P-type
• Resistivity: R:1.4-1.7  ohm.c (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.)
• Package: under 1000 class clean room     

Typical Properties:

• Structure: Cubic, a = 5.6754 A
• Density: 5.323 g/cm3 at room temperature
• Melting Point: 937.4 ^oC
• Thermal Conductivity: 640

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