Ge Wafer(100). 100mm dia x 0.5 mm, 2SP, P type (Ga doped) R: 0.004-0.01ohm.cm - GEGaa100D05C2BeR0004US

Specification

• Growing Method: CZ
• Orientation: (100) +/- (0.10-0.16) Deg.
• Primary Flat: <110> +/- (0.17-0.20) Deg.
• Wafer Size: 100mm(+/-0.05mm)  dia x  500 (+/-25 microns  )
• Surface Polishing: Two sides epi polished
• Surface roughness: < 5 A ( by AFM)
• Doping: Ga Doped
• Conductor type: P-type
• Resistivity: R: 0.004-0.01 ohm.cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.)
• Package: under 1000 class clean room     

Typical Properties:

• Structure: Cubic, a = 5.6754 A
• Density: 5.323 g/cm3 at room temperature
• Melting Point: 937.4 ^oC
• Thermal Conductivity: 640

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