Ge Wafer (100) 2" dia x 0.4 mm, 2SP, N type (Sb doped), resistivities: 0.001-0.01 ohm-cm

Ge Wafer (100) 2" dia x 0.4 mm, 2SP, N type (Sb doped), resistivities: 0.001-0.01 ohm-cm

RM0.00 MYR
RM0.00 MYR
Skip to product information
Ge Wafer (100) 2" dia x 0.4 mm, 2SP, N type (Sb doped), resistivities: 0.001-0.01 ohm-cm
  • Ge Wafer (100) 2" dia x 0.4 mm, 2SP, N type (Sb doped), resistivities: 0.001-0.01 ohm-cm
Ge Wafer (100) 2" dia x 0.4 mm, 2SP, N type (Sb doped), resistivities: 0.001-0.01 ohm-cm

Ge Wafer (100) 2" dia x 0.4 mm, 2SP, N type (Sb doped), resistivities: 0.001-0.01 ohm-cm

SKU: ge-wafer-100-2-dia-x-0-45-mm-2sp-n-type-sb-doped-resistivities-0-001-0-01-ohm-cm

Price: RFQ

Description

 Ge Wafer Specification Growing Method:              CZ Orientation:                      (100) +/_0.5 Deg. Wafer Size:                      2" dia x  400 microns Surface Polishing:            Two sides epi polished Surface roughness: RMS or Ra : ~ 10 A ( by AFM) Doping:                            Sb Doped Conductor type:                N-type Resistivity:                       0.001-0.01 Ohms/cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument .) Package:                         under 1000 class clean room Typical Properties: Structure:                        Cubic, a = 5.6754 A Density:                           5.323 g/cm3 at room temperature Melting Point:                   937.4 o C Thermal Conductivity:        640 Related Product Other Crystal wafer A-Z Plasma Cleaner Wafer Containers Dicing saw Film Coater

Other Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater