Ge Substrate (111) 5x5x0.5 mm, 2 SP, Sb-doped . 0.005-0.01 Ohm.cm

Specifications

• Growing Method: CZ
• Wafer Size: 5x5x0.5 mm
• Surface Polishing: Two sides epi polished
• Orientation: (111)
• Surface roughness: < 8 A ( by AFM)
• Doping: Sb-doped
• Conductor type: N-type
• Resistivity: 0.005-0.01 Ohms/cm
• EPD: N/A
• Package: under 1000 class clean room  in wafer container

Target  A-Z	Crystal Substrate A-Z	Plasma/UO Cleaner	Round Wafer Carriers	Cutting/Dicing Saws	Film Coaters