Ge Substrate: (100)+/- 2 degree, 10x5 x 0.5 mm , 2SP, P type Ga doped,R:10-15 ohm.cm

Ge Wafer Specification

• Growing Method: CZ 
• Wafer Size: 10 x 5 x0.5 mm 
• Surface Polishing: two sides epi polished 
• Orientation: (100)+/- 2 degree 
• Surface roughness: RMS or Ra:~ 10 A(By AFM)
• Doping: Ga doped 
• Conductor type: P-type 
• Resistivity: 10-15 Ohms/cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.)
• Package: under 1000 class clean room     
  

Target  A-Z	Crystal Substrate A-Z	Plasma/UO Cleaner	Round Wafer Carriers	Cutting/Dicing Saws	Film Coaters