Ge Substrate (100)+/-2.5 degree 5x 5x0.5 mm, 1 SP, Undoped, N-type, R: >50 ohm.cm

Specifications

• Growing Method: CZ
• Wafer Size: 5 x 5 x0.5 mm
• Surface Polishing: one  side epi polished
• Orientation: (100)
  
• Surface roughness: RMS or Ra:~ 10 A(By AFM)
  
• Doping: Ga doped
  
• Conductor type: P-type
  
• Resistivity: 1-5 Ohms/cm  (If you would like to measure the resistivity accurately, Please order our Portable 4 Probe Resistivity Testing Instrument.)              
• Package: under 1000 class clean room  in wafer container    
  

Target  A-Z	Crystal Substrate A-Z	Plasma/UO Cleaner	Round Wafer Carriers	Cutting/Dicing Saws	Film Coaters