Ge Single crystal substrate, N-type Undoped (100) +/-2.5 Degree, 10x10x0.5mm, 1sp, R: >50 ohm.cm

• Growth Method: CZ
• Dimensions: 10 x 10 x 0.5 mm
• Orientation: (100)
• Polishing: One side epi-polished (1SP), surface roughness Ra ~10A
• Electrical Properties: N-type, undoped, with a high resistivity of > 50 Ohms/cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.)
• Package: under 1000 class clean room     

Typical Properties:

• Structure: Cubic, a = 5.6754 A
• Density: 5.323 g/cm3 at room temperature
• Melting Point: 937.4 ^oC
• Thermal Conductivity: 640

Target  A-Z	Crystal Substrate A-Z	Plasma/UO Cleaner	Round Wafer Carriers	Cutting/Dicing Saws	Film Coaters