Ge Single Crystal Substrate, N-type Sb-doped (100) 5x5x 0.45mm 1sp, R<0.009ohm.cm

Ge Wafer Specification

• Growing Method: CZ
• Wafer Size: 5x5 x0.45 mm
• Surface Polishing: one side epi polished
• Orientation: (100)
• Surface roughness: RMS or Ra:~ 10 A(By AFM)
• Doping: Sb doped
• Conductor type: N-type
• Resistivity: <0.009 Ohm.cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.)
• Package: under 1000 class clean room     

Typical Properties:

• Structure: Cubic, a = 5.6754 A
• Density: 5.323 g/cm3 at room temperature
• Melting Point: 937.4 ^oC
• Thermal Conductivity: 640

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