GaP wafer, S doped, (111) orientation, 2" dia x 0.5mm, 1sp - GPSc50D05C1

GaP wafer, S doped, (111) orientation, 2" dia x 0.5mm, 1sp - GPSc50D05C1

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GaP wafer, S doped, (111) orientation, 2" dia x 0.5mm, 1sp - GPSc50D05C1
  • GaP wafer, S doped, (111) orientation, 2" dia x 0.5mm, 1sp - GPSc50D05C1
GaP wafer, S doped, (111) orientation, 2" dia x 0.5mm, 1sp - GPSc50D05C1

GaP wafer, S doped, (111) orientation, 2" dia x 0.5mm, 1sp - GPSc50D05C1

SKU: gap-wafer-s-doped-111-orientation-2-dia-x-0-5mm-1sp-gpsc50d05c1

Price: RFQ

Description

 GaP single crystal wafer, Size: 2" diameter(+/_0.15mm) x 0.5mm(+/_ 0.05mm), Doping: S-doped, Conducting type: N-type, Orientation: (111)+_30' Edge Orientation: (110) ± 1 ° Polished:One  side  polished. Surface finish (RMS or Ra) : < 8A Typical Physical Properties Crystal Structure Cubic.            a =5.4505 ?/FONT> Growth Method CZ (LEC) Density 4.13  g/cm 3 Melt Point 1480 o C Thermal Expansion 5.3 x10 -6 / o C Dopant S doped undoped Crystal growth axis <111>  or <100> <100> or <111> Conducting Type N N Carrier Concentration 2 ~ 8 x10 17 /cm 3 4 ~ 6 x10 16 /cm 3 Resistivity ~ 0.03 W-cm ~ 0.3 W-cm EPD < 3x10 5 < 3x10 5 Related Product Other Crystal wafer A-Z Plasma Cleaner Wafer Containers Dicing saw Film Coater

Typical Physical Properties

Crystal Structure

Cubic.            a =5.4505 ?/FONT>

Growth Method

CZ (LEC)

Density

4.13  g/cm3

Melt Point

1480  oC

Thermal Expansion

5.3 x10-6  / oC

Dopant

S doped

undoped

Crystal growth axis

<111>  or <100>

<100> or <111>

Conducting Type

N

N

Carrier Concentration

2 ~ 8 x1017 /cm3

4 ~ 6 x1016 /cm3

Resistivity

~ 0.03 W-cm

~ 0.3 W-cm

EPD

< 3x105

< 3x105
,

Other Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater