GaP wafer, S doped, (100), 5 x 5 x 0.5 mm, 1sp

GaP wafer, S doped, (100), 5 x 5 x 0.5 mm, 1sp

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GaP wafer, S doped, (100), 5 x 5 x 0.5 mm, 1sp
  • GaP wafer, S doped, (100), 5 x 5 x 0.5 mm, 1sp
GaP wafer, S doped, (100), 5 x 5 x 0.5 mm, 1sp

GaP wafer, S doped, (100), 5 x 5 x 0.5 mm, 1sp

SKU: gap-wafer-s-doped-100-5-x-5-x-0-5-mm-1sp

Price: RFQ

Description

 (GaP single crystal wafer Size:5mmx5mmx0.5mm Doping: S-doped, Conducting type: N-type Orientation: (100)+_30' Polished: One  side  polished. Surface finish (RMS or Ra) : < 8A Typical Physical Properties Crystal Structure Cubic.            a =5.4505 ?/FONT> Growth Method CZ (LEC) Density 4.13  g/cm 3 Melt Point 1480 o C Thermal Expansion 5.3 x10 -6 / o C Dopant S doped undoped Crystal growth axis <111>  or <100> <100> or <111> Conducting Type N N Carrier Concentration (2 ~ 12) x10 17 /cm 3 4 ~ 6 x10 16 /cm 3 Resistivity ~ 0.03 ohm-cm ~ 0.3 ohm-cm EPD < 3x10 5 < 3x10 5 Related Product Other Crystal wafer A-Z Plasma Cleaner Wafer Containers Dicing saw Film Coater

Typical Physical Properties

Crystal Structure

Cubic.            a =5.4505 ?/FONT>

Growth Method

CZ (LEC)

Density

4.13  g/cm3

Melt Point

1480  oC

Thermal Expansion

5.3 x10-6  / oC

Dopant

S doped

undoped

Crystal growth axis

<111>  or <100>

<100> or <111>

Conducting Type

N

N

Carrier Concentration

(2 ~ 12) x1017 /cm3

4 ~ 6 x1016 /cm3

Resistivity

~ 0.03ohm-cm

~ 0.3 ohm-cm

EPD

< 3x105

< 3x105
,

Other Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater