GaP wafer, N type, S doped, (100), 2 deg toward [101] +/- 0.5 deg, 48 mm in dia x 0.25 mm, 1sp

GaP wafer, N type, S doped, (100), 2 deg toward [101] +/- 0.5 deg, 48 mm in dia x 0.25 mm, 1sp

RM0.00 MYR
RM0.00 MYR
Skip to product information
GaP wafer, N type, S doped, (100), 2 deg toward [101] +/- 0.5 deg, 48 mm in dia x 0.25 mm, 1sp
  • GaP wafer, N type, S doped, (100), 2 deg toward [101] +/- 0.5 deg, 48 mm in dia x 0.25 mm, 1sp
GaP wafer, N type, S doped, (100), 2 deg toward [101] +/- 0.5 deg, 48 mm in dia x 0.25 mm, 1sp

GaP wafer, N type, S doped, (100), 2 deg toward [101] +/- 0.5 deg, 48 mm in dia x 0.25 mm, 1sp

SKU: gap-wafer-n-type-s-doped-100-2-deg-toward-101-0-5-deg-48-mm-in-dia-x-0-25-mm-1sp

Price: RFQ

Description
  • GaP single crystal wafer,
  • Size: 48 mm in diameter x 0.25mm,
  • Doping: S doped 
  • Conducting type: N-type,
  • Orientation: (100) 2 degree OFF toward [101] +/- 0.5 deg
  • Polished: one side
  • Surface finish (RMS or Ra) : < 8A
  • Carrier Concentration: (0.25 ~ 2.0 ) E18 / cm^3
  • Risistivities: 0.185 ohm-cm

Typical Physical Properties

Crystal Structure

Cubic.            a =5.4505 ?/FONT>

Growth Method

CZ (LEC)

Density

4.13  g/cm3

Melt Point

1480  oC

Thermal Expansion

5.3 x10-6  / oC

Dopant

S doped

undoped

Crystal growth axis

<111>  or <100>

<100> or <111>

Conducting Type

N

N

Carrier Concentration

(2 ~ 12) x1017 /cm3

4 ~ 6 x1016 /cm3

Resistivity

~ 0.03 ohm-cm

~ 0.3 ohm-cm

EPD

< 3x105

< 3x105



Zn Target, >99.95% 75 mm diax5.0mm - TGTZn75D50T

Quartz single crystal, optical grade Z-cut, 10x10x1.0mm, 1 sp - SOZ101010S1

Precision CNC Dicing / Dicing Saw with Digital Controller and Complete Accessories - SYJ800

Target  A-Z

Crystal Substrate A-Z

Plasma/UO Cleaner

Round Wafer Carriers

Cutting/Dicing Saws

Film Coaters