Description
Substrate Specifications
- Chemistry: ß-Ga2O3 ( Made in China)
- Structure: Monoclinic
- Lattice Constant: a=12.23A, b=3.04A, c=5.80A, ß=103.7°
- Orientation: <-201> +/-0.7° ( Please pay attention a, b, c axis definition above )
- Type/Dopant: N type/Sn-doped
- Size: 10x10 x 0.6 mm
- Polish: one side polished
- Surface roughness: < 5A
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