Description
Substrate Specifications
- Chemistry: ß-Ga2O3
- Structure: Monoclinic
- Lattice Constant: a=12.23A, b=3.04A, c=5.80A, ß=103.7°
- Orientation: <100> +/-1° ( Please pay attention a, b, c axis defination above )
- Type/Dopant: N type ,Fe-doped
- Size: 10x10 x 0.5 mm
- Polish: one side polished
- Resistivity: <0.01 ohm.cm
- Surface roughness: < 15A
- Useful Area: >80%
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