Description
Substrate Specifications
- Chemistry: ß-Ga2O3
- Grown Method: Czochralski
- Structure: Monoclinic
- Lattice Constant: a=12.23A, b=3.04A, c=5.80A, ß=103.7°
- Orientation: <010> +/-1°
- Size: 10x10 x 0.35 mm
- Conduction Type: Semi-insulating, Fe-doped
- Doping density (Fe): ~5E17 by SIMS.
- Front surface finish: Epi-polished, RMS <0.5nm
Back surface finish: Optical polished
 |
|||||
